| PART |
Description |
Maker |
| TS1GJFV10 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| W3EG264M72AFSR335D3XG |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相环，FBGA封装
|
KEMET Corporation
|
| TS512MJFV30 |
512MB USB2.0 JetFlash垄芒V30
512MB USB2.0 JetFlash?V30
|
Transcend Information. Inc.
|
| TS4GJF300 |
4GB USB2.0 JetFlash垄莽300
4GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
| TS8GJF300 |
8GB USB2.0 JetFlash垄莽300
8GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
| TS16GJFV33 |
16GB USB2.0 JetFlash垄芒V33
16GB USB2.0 JetFlash?V33
|
Transcend Information. Inc.
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
| TS2GJF220 |
2GB USB2.0 JetFlash垄芒220
2GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
| TS2GJF2A |
2GB USB2.0 JetFlash垄莽2A
2GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
|
| TS4GJF220 |
4GB USB2.0 JetFlash垄芒220
4GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
